FDFMC2P120

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3.5 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.125 Ohms
Package / Case : MLP-6


Features:

• 2 A, 20 V R_DS(ON) = 125 mΩ @ V_GS = 4.5 V R_DS(ON) = 200 mΩ @ V_GS = 2.5 V
• Low Profile 0.8mm maximum in the new package MicroFET 3x3 mm


Application

• Buck Boost


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ±12 3.5 10 20 2 2.4 1.2 55 to +150	V V A V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
VRRM	Schottky Repetitive Peak Reverse Voltage
IO	Schottky Average Forward Current	(Note a)
PD	Power Dissipation (Steady State)	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.

This FDFMC2P120 device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.