FDG6320C

Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 4 Ohms
Continuous Drain Current : 0.22 A


Features:

·N-Ch 0.22 A, 25 V, R_DS(ON) = 4.0 W @ V_GS= 4.5 V, R_DS(ON)  = 5.0 W @ V_GS= 2.7 V.
·P-Ch -0.14 A, -25V, R_DS(ON)  = 10 W @ V_GS= -4.5V, R_DS(ON)  = 13 W @ V_GS= -2.7V.
·Very small package outline SC70-6.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).


Pinout




Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		25 8 0.22 0.65	-25 -8 -0.14 -0.4	V V A W °C kV
ID	Drain Current - Continuous - Pulsed
PD	Power Dissipation for Single Operation	(Note 1)	0.3 -55 to 150 6
TJ,TSTG ESD	Operating and Storage Temperature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)

Description

These FDG6320C dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device FDG6320C has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Parameters:

Technical/Catalog Information	FDG6320C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	220mA, 140mA
Rds On (Max) @ Id, Vgs	4 Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) @ Vds	9.5pF @ 10V
Power - Max	300mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.4nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG6320C FDG6320C