FDG6320C

MOSFET SC70-6 COMP N-P-CH

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SeekIC No. : 00150327 Detail

FDG6320C: MOSFET SC70-6 COMP N-P-CH

floor Price/Ceiling Price

US $ .14~.25 / Piece | Get Latest Price
Part Number:
FDG6320C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.25
  • $.21
  • $.17
  • $.14
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2020/3/28

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.22 A
Resistance Drain-Source RDS (on) : 4 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 4 Ohms
Continuous Drain Current : 0.22 A


Features:

·N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 W @ VGS= 4.5 V, RDS(ON)  = 5.0 W @ VGS= 2.7 V.
·P-Ch -0.14 A, -25V, RDS(ON)  = 10 W @ VGS= -4.5V, RDS(ON)  = 13 W @ VGS= -2.7V.
·Very small package outline SC70-6.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
N-Channel
P-Channel
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
25
8
0.22
0.65
-25
-8
-0.14
-0.4
V
V
A

W

°C
kV
ID
Drain Current - Continuous - Pulsed

PD

Power Dissipation for Single Operation (Note 1)
0.3
-55 to 150
6
TJ,TSTG
ESD
Operating and Storage Temperature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)



Description

These FDG6320C dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device FDG6320C has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.




Parameters:

Technical/Catalog InformationFDG6320C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C220mA, 140mA
Rds On (Max) @ Id, Vgs4 Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) @ Vds 9.5pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs0.4nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6320C
FDG6320C



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