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FDI025N06

MOSFET 60V N-Channel PowerTrench

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SeekIC No. : 00162620 Detail

FDI025N06: MOSFET 60V N-Channel PowerTrench

FDI025N06 Data Sheet

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Part Number:
FDI025N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 265 A
Resistance Drain-Source RDS (on) : 0.0025 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.0025 Ohms
Continuous Drain Current : 265 A


Parameters:

Technical/Catalog InformationFDI025N06
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C265A
Rds On (Max) @ Id, Vgs2.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 14885pF @ 25V
Power - Max395W
PackagingTube
Gate Charge (Qg) @ Vgs226nC @ 10V
Package / CaseTO-262
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI025N06
FDI025N06



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