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FDI045N10A

MOSFET N-CH 100V 120A I2PAK-3

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SeekIC No. : 003431266 Detail

FDI045N10A: MOSFET N-CH 100V 120A I2PAK-3

FDI045N10A Data Sheet

floor Price/Ceiling Price

US $ 1.93~1.93 / Piece | Get Latest Price
Part Number:
FDI045N10A
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~150
  • Unit Price
  • $1.93
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: PowerTrench® Manufacturer: Fairchild Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 120A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 74nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5270pF @ 50V
Power - Max: 263W Mounting Type: Through Hole
Package / Case: TO-262-3 (Straight Leads) Supplier Device Package: TO-262-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 74nC @ 10V
Supplier Device Package: TO-262-3
Current - Continuous Drain (Id) @ 25° C: 120A
Power - Max: 263W
Input Capacitance (Ciss) @ Vds: 5270pF @ 50V
Manufacturer: Fairchild Semiconductor
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 100A, 10V
Package / Case: TO-262-3 (Straight Leads)


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