FDI038AN06A0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.0035 Ohms


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDI038AN06A0	Full Production	RoHS Compliant	$3.48	TO-262(I2PAK)	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FDI038AN Line 3: 06A0

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDI038AN06A0 is available. Click here for more information .

Parameters:

Technical/Catalog Information	FDI038AN06A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6400pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	124nC @ 10V
Package / Case	TO-262AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDI038AN06A0 FDI038AN06A0