FDI040N06

MOSFET PT3 Low Qg 60V, 4.0Mohm

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FDI040N06 Picture
SeekIC No. : 00161355 Detail

FDI040N06: MOSFET PT3 Low Qg 60V, 4.0Mohm

floor Price/Ceiling Price

Part Number:
FDI040N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 168 A Resistance Drain-Source RDS (on) : 3.2 m Ohms at 10 V
Configuration : Single Maximum Operating Temperature : + 175 C
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 168 A
Resistance Drain-Source RDS (on) : 3.2 m Ohms at 10 V


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