FDR856P

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 25 mOhms
Continuous Drain Current : 5.1 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

·- 6.3 A, -30 V, RDS(ON) =0.025 W @ VGS = -10 V
                         RDS(ON) =0.040 W @ VGS = -4.5 V.
·SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8.
·High density cell design for extremely low RDS(ON).


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Draint Current - Continuous (Note 1)	-5.1	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors FDR856P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices FDR856P are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.