FDR858P

MOSFET SSOT-8 P-CH -30V

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SeekIC No. : 00162949 Detail

FDR858P: MOSFET SSOT-8 P-CH -30V

floor Price/Ceiling Price

Part Number:
FDR858P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.019 Ohms Configuration : Single Quint Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.019 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Features:

·-8 A, -30 V. RDS(ON) = 0.019 W @ VGS = -10 V,
                      RDS(ON) = 0.028 W @ VGS = -4.5 V.
·Low gate charge (21nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-8 package: small footprint (40%) less than SO-8); low profile (1mm thick); maximum power comperable to SO-8.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
ID
Draint Current - Continuous (Note 1)
-8
A
- Pulsed
-50
PD
Maximum Power Dissipation (Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs FDR858P have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

This FDR858P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These FDR858P devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.




Parameters:

Technical/Catalog InformationFDR858P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs19 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds 2010pF @ 15V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 5V
Package / CaseSSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR858P
FDR858P
FDR858PTR ND
FDR858PTRND
FDR858PTR



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