FDS2670

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 200 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 3 A


Features:

• 3.0 A, 200 V. R_DS(ON) = 0.125 @ V_GS = 10 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	200	V
VGSS	Gate-Source Voltage	± 20
ID	Drain Current Continuous (Note 1a)              Pulsed	3.0	A
		20
PD	Power Dissipation (Note 1a)                   (Note 1b)                   (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS2670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS2670 feature faster switching and lower gate charge than other MOSFETs with  comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDS2670
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	130 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1228pF @ 100V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	43nC @ 10V
Package / Case	SO-8
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2670 FDS2670 FDS2670DKR ND FDS2670DKRND FDS2670DKR