FDS8958A

MOSFET SO8 COMP N-P-CH T/R

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SeekIC No. : 00151361 Detail

FDS8958A: MOSFET SO8 COMP N-P-CH T/R

floor Price/Ceiling Price

US $ .28~.48 / Piece | Get Latest Price
Part Number:
FDS8958A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.48
  • $.42
  • $.32
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7 A, - 5 A
Resistance Drain-Source RDS (on) : 19 mOhms, 42 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7 A, - 5 A
Resistance Drain-Source RDS (on) : 19 mOhms, 42 mOhms


Features:

• Q1: N-Channel
7.0A, 30V RDS(on) = 0.028 @ VGS = 10V
RDS(on) = 0.040 @ VGS = 4.5V
• Q2: P-Channel
-5A, -30V RDS(on) = 0.052 @ VGS = -10V
RDS(on) = 0.080 @ VGS = -4.5V
• Fast switching speed
• High power and handling capability in a widely used surface mount package





Pinout






Specifications

Symbol Parameter
Q1
Q2
Units
VDSS Drain-Source Voltage
30
30
V
VGSS Gate-Source Voltage
±20
±20
ID

Drain Current

Continuous (Note 1a)
Pulsed
7
-5
A
20
-20
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C





Description

These FDS8958A dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices FDS8958A are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.






Parameters:

Technical/Catalog InformationFDS8958A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7A, 5A
Rds On (Max) @ Id, Vgs28 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 690pF @ 10V
Power - Max2W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS8958A
FDS8958A
FDS8958ADKR ND
FDS8958ADKRND
FDS8958ADKR



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