MFG:FAIRC Package Cooled:SOP-8 D/C:09+
MFG: FAIRC
Package Cooled: SOP-8
D/C: 09+
Description: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchi...
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
| Symbol | Parameter |
Q1 |
Q2 |
Units | |
| VDSS | Drain-Source Voltage |
30 |
30 |
V | |
| VGSS | Gate-Source Voltage |
±20 |
±20 | ||
| ID |
Drain Current |
Continuous (Note 1a) Pulsed |
7 |
-5 |
A |
|
20 |
-20 | ||||
| PD |
Power Dissipation for Dual Operation |
2 |
W | ||
| Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
1.6 | |||
|
1 | |||||
|
0.9 | |||||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C | ||
Q1: N-Channel
7.0A, 30V RDS(on) = 0.030 @ VGS = 10V
RDS(on) = 0.044 @ VGS = 4.5V
Q2: P-Channel
-5A, -30V RDS(on) = 0.052 @ VGS = -10V
RDS(on) = 0.080 @ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely used surface mount package
FDS8962C
PDF/DataSheet Download
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