IGBT Transistors 300V PDP
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 300 V | ||
| Maximum Gate Emitter Voltage : | +/- 30 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-3PN-3 | Packaging : | Tube |
| Technical/Catalog Information | FGA70N30TTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Current - Collector (Ic) (Max) | - |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 20A |
| Power - Max | 201W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGA70N30TTU FGA70N30TTU |