MOSFET 80V N-Channel QFET Logic Level
FQB17N08LTM: MOSFET 80V N-Channel QFET Logic Level
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 16.5 A | ||
| Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263 | Packaging : | Reel |
| Technical/Catalog Information | FQB17N08LTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 16.5A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 8.25A, 10V |
| Input Capacitance (Ciss) @ Vds | 520pF @ 25V |
| Power - Max | 3.75W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11.5nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQB17N08LTM FQB17N08LTM |