Position: Home  > All Categories> Integrated Circuits (ICs) > FQB1P50

FQB1P50

Features: • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V• Low gate charge ( typical 11 nC)• Low Crss ( typical 6.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB1P50 / FQI1P50 Units VD...

product image

FQB1P50 Picture
See larger image
SeekIC No. : 004343095 Detail

FQB1P50: Features: • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V• Low gate charge ( typical 11 nC)• Low Crss ( typical 6.0 pF)• Fast switching• 100% avalanche tested•...

FQB1P50 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB1P50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/1

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB1P50 / FQI1P50
Units
VDSS Drain-Source Voltage
-500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-1.5
A
-0.95
A
IDM Drain Current - Pulsed (Note 1)
-6.0
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
110
mJ
IAR Avalanche Current (Note 1)
-1.5
A
EAR Repetitive Avalanche Energy (Note 1)
6.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
63
W
0.51
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power FQB1P50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB1P50 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQB1P50 is well suited for electronic lamp ballasts based on the complementary half bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
LED Products
LM24P20
KCG057QV1DB-G770
Tapes, Adhesives
803
AC452-2
Cable Assemblies
CS1W-CN114
XW2Z-500T
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
View more