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FQD12P10TF

MOSFET 100V P-Channel QFET

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SeekIC No. : 00159746 Detail

FQD12P10TF: MOSFET 100V P-Channel QFET

FQD12P10TF Data Sheet

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Part Number:
FQD12P10TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 9.4 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : - 9.4 A
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.29 Ohms


Parameters:

Technical/Catalog InformationFQD12P10TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C9.4A
Rds On (Max) @ Id, Vgs290 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD12P10TF
FQD12P10TF



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