FQD13N06L

Symbol

Parameter

FQD13N06L / FQU13N06L

Units

V_DSS

Drain-Source Voltage

50

V

I_D

Drain Current

- Continuous (TC =25°C)

11

A

- Continuous (TC = 100°C)

7

A

I_DM

Drain Current Pulsed                     (Note 1)

44

A

V_GSS

Gate-Source Voltage

±  20

V

E_AS

Single Pulsed Avalanche Energy            (Note 2)

90

mJ

I_AR

Avalanche Current                         (Note 1)

11

A

E_AR

Repetitive Avalanche Energy                (Note 1)

2.8

mJ

d _v/dt

Peak Diode Recovery dv/dt                  (Note 3)

7.0

V/ns

P_D

Power Dissipation (TA = 25°C)

2..5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

28
0.22

W
W/°C

T_{J, TSTG}

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300

°C