MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: MOSFET N-CH 100V 10A DPAK
2500
.22620
565.50
| Technical/Catalog Information | FQD13N10LTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 520pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 12nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD13N10LTM FQD13N10LTM |
FQD10N20
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MOSFET N-CH 100V 10A DPAK
These N-Channel enhancement mode power FQD13N10Lfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching p...
These N-Channel enhancement mode power FQD13N10field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi...
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