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FQD17N08LTM

MOSFET 80V N-Channel QFET Logic Level

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SeekIC No. : 00159598 Detail

FQD17N08LTM: MOSFET 80V N-Channel QFET Logic Level

FQD17N08LTM Data Sheet

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Part Number:
FQD17N08LTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12.9 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Package / Case : TO-252
Drain-Source Breakdown Voltage : 80 V
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 12.9 A


Parameters:

Technical/Catalog InformationFQD17N08LTM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C12.9A
Rds On (Max) @ Id, Vgs100 mOhm @ 6.45A, 10V
Input Capacitance (Ciss) @ Vds 520pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11.5nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD17N08LTM
FQD17N08LTM



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