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FQD1N80TM

MOSFET Power MOSFET

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SeekIC No. : 00149909 Detail

FQD1N80TM: MOSFET Power MOSFET

FQD1N80TM Data Sheet

floor Price/Ceiling Price

US $ .26~.39 / Piece | Get Latest Price
Part Number:
FQD1N80TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.39
  • $.35
  • $.3
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 20 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 20 Ohms


Parameters:

Technical/Catalog InformationFQD1N80TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 195pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.2nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD1N80TM
FQD1N80TM



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