MFG:FSC Package Cooled:TO-220 D/C:04+
MFG: FSC
Package Cooled: TO-220
D/C: 04+
Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
|
Symbol |
Parameter |
FQP11P06 |
Units |
| VDSS | Drain-Source Voltage |
-60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-11.4 |
A |
|
-8.05 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-45.6 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
160 |
mJ |
| IAR | Avalanche Current (Note 1) |
-11.4 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
5.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-7.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
53 |
W |
|
0.35 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQP11P06
PDF/DataSheet Download
These N-Channel enhancement mode power FQP11N50CFfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior swit...
MOSFET N-CH 400V 10.5A TO-220
MOSFET N-CH 400V 11.4A TO-220
These N-Channel enhancement mode power FQP10N60Cfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology FQP10N60Chas been especially tailored to minimize on-state resistance, provide superi...
These N-Channel enhancement mode power FQP10N20Lfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology FQP10N20Lis especially tailored to minimize on-state resistance, provide superior s...
MOSFET N-CH 200V 9.5A TO-220
Price: 1.08-1.2 USD
256Mb J-die DDR SDRAM, TSOP, 7.8us refresh interval, Four banks operation
Price: 18-20 USD
RF POWER TRANSISTORS NPN SILICON MRF1946
Price: 14.8-23 USD
DC/DC power modules, -48V and -60V, thick film technology
Price: 0.35-1.5 USD
OP07CDR - PRECISION OPERATIONAL AMPLIFIERS - Texas Instruments
Price: 6-7 USD
Communications Controller ,BGA, 16-bit
Price: 2.3-4 USD
High Voltage BIMOSFET, Monolithic Bipolar, MOS Transistor, TO-247, 1600 V, 6 g
Price: 1.1-2.5 USD
IC DIG SIG PROCESSOR 144-LQFP - TMS320VC5402PGE100
Price: 30-52 USD
8kB or 32kB, nonvolatile static RAM, RAMified Watchdog Timekeeper
Price: 1-10 USD
triac, 16A, TO-220F
Price: 25-28 USD
real time clock, microprocessor bus, 8-Bit
Price: 0.7-0.9 USD
IC TXRX RS485/RS422 LOWPWR 8SOIC - MAX485ESA
Price: 7.8-8.5 USD
5k, 144-TQFP, Altera Cyclone II FPGA , I/O support, High-density architecture
