FQP17P06

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : 17 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.12 Ohms


Features:

• -17A, -60V, R_DS(on) = 0.12 @V_GS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP17P06	Units
VDSS	Drain-Source Voltage	-60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-17	A
		-12	A
IDM	Drain Current - Pulsed (Note 1)	-68	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	300	mJ
IAR	Avalanche Current (Note 1)	-17	A
EAR	Repetitive Avalanche Energy (Note 1)	7.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	79	W
		0.53	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.2mH, I_AS = -17A, V_DD = -25V, R_G = 25 , Starting T_J = 25°C
3. I_SD -17A, di/dt 300A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These P-Channel enhancement mode power field effect transistors of FQP17P06 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQP17P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Parameters:

Technical/Catalog Information	FQP17P06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	120 mOhm @ 8.5A,10V
Input Capacitance (Ciss) @ Vds	900pF @ 25V
Power - Max	79W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP17P06 FQP17P06