Purchase GAL20V8, In-stock GAL20V8 From SeekIC.
MFG:LATTICE D/C:08+
Part Number: GAL20V8
MFG: LATTICE
D/C: 08+
Description: The GAL20V8C, at 5ns maximum propagation delay time, com- bines a high performance CMOS process with E...
- Table of contents:
GAL20V8
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Suppliers
DataSheet
General Description
GAL20V8 General Description
The GAL20V8C, at 5ns maximum propagation delay time, com- bines a high performance CMOS process with Electrically Eras- able (E2 ) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and ef- ficiently.
The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. An important subset of the many architecture configura- tions possible with the GAL20V8 are the PAL
architectures listed in the table of the macrocell description section. GAL20V8 devices are capable of emulating any of these PAL architectures with full function/fuse map/parametric compatibility.
Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and function- ality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.
GAL20V8 Maximum Ratings
Supply voltage VCC ....................................... 0.5 to +7V
Input voltage applied .......................... 2.5 to VCC +1.0V
Off-state output voltage applied ......... 2.5 to VCC +1.0V
Storage Temperature ................................... 65 to 150
Ambient Temperature with
Power Applied .............................................. 55 to 125
1.Stresses above those listed under the "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress only
ratings and functional operation of the device at these or at any
other conditions above those indicated in the operational sections of
this specification is not implied (while programming, follow the
programming specifications).
Input voltage applied .......................... 2.5 to VCC +1.0V
Off-state output voltage applied ......... 2.5 to VCC +1.0V
Storage Temperature ................................... 65 to 150
Ambient Temperature with
Power Applied .............................................. 55 to 125
1.Stresses above those listed under the "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress only
ratings and functional operation of the device at these or at any
other conditions above those indicated in the operational sections of
this specification is not implied (while programming, follow the
programming specifications).
GAL20V8 Features
• HIGH PERFORMANCE E2 CMOS® TECHNOLOGY
- 5 ns Maximum Propagation Delay
- Fmax = 166 MHz
- 4 ns Maximum from Clock Input to Data Output
- UltraMOS® Advanced CMOS Technology
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR
- 75mA Typ Icc on Low Power Device
- 45mA Typ Icc on Quarter Power Device
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
- Reconfigurable Logic
- Reprogrammable Cells
- 100% Tested/100% Yields
- High Speed Electrical Erasure (<100ms)
- 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
- Maximum Flexibility for Complex Logic Designs
- Programmable Output Polarity
- Also Emulates 24-pin PAL® Devices with Full Function/ Fuse Map/
Parametric Compatibility
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
- 100% Functional Testability
• APPLICATIONS INCLUDE:
- DMA Control
- State Machine Control
- High Speed Graphics Processing
- Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
- 5 ns Maximum Propagation Delay
- Fmax = 166 MHz
- 4 ns Maximum from Clock Input to Data Output
- UltraMOS® Advanced CMOS Technology
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR
- 75mA Typ Icc on Low Power Device
- 45mA Typ Icc on Quarter Power Device
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
- Reconfigurable Logic
- Reprogrammable Cells
- 100% Tested/100% Yields
- High Speed Electrical Erasure (<100ms)
- 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
- Maximum Flexibility for Complex Logic Designs
- Programmable Output Polarity
- Also Emulates 24-pin PAL® Devices with Full Function/ Fuse Map/
Parametric Compatibility
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
- 100% Functional Testability
• APPLICATIONS INCLUDE:
- DMA Control
- State Machine Control
- High Speed Graphics Processing
- Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
GAL20V8 Connection Diagram
GAL20V8
PDF/DataSheet Download
- Datasheet: GAL20V8
- File Size: 315424 KB
- Manufacturer: LATTICE [Lattice Semiconductor]
- Click here to Download
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