GAL20V8QS-10L

The EECMOS GAL20V8QS-10L is fabricated using national's CS80BEV 0.8u  electrically erasable CMOS progress.This advanced process makes national's GAL20V8QS extremly fast,allowing controlled output edge rates which dramatically reduce noise.Low noise is actually specified and guaranteed with national's GAL16V8QS quiet series devices.

Features of the GAL20V8QS-10L are:(1)high performance 0.8 us EECMOS technology; (2)reduced power; (3)electrically erasable cell technology; (4)fast programming algorithm; (5)emulates popular PAL devices; (6)commercial and industrial grades.

The absolute maximum ratings of the GAL20V8QS-10L can be summarized as:(1): supply voltage(VCC) is -0.5 V to 7 V; (2): input voltage is -2.5 V to Vcc+1.0 V; (3): off-state output voltage is -2.5 V to Vcc+1.0 V; (4): output current is ±100 mA; (5): storage temperature is -65 to +150; (6): latchup current is 200 mA; (7): ambient temperature with power applied to -65 to +125; (8): junction temperature is -65 to +150; (9): lead temperature(soldering, 10 seconds) is 300.