GLT41016-40J4

The GLT41016-40J4 is designed as a 65,536x16 bit highperformance CMOS dynamic random access memory. GLT41016-40J4 offers fast page mode with extended data output, and has both byte write and word write access cycles via two CAS pins. It accepts 256-cycle refresh in 4ms interval.

GLT41016-40J4 has ten features. (1)65,536 words by 16 bits organization. (2)Fast access time and cycle time. (3)Dual CAS input. (4)Low power dissipation. (5)Read-modify-write, RAS-only refresh, CAS-before-RAS refresh, hidden refresh and test mode capability. (6)256 refresh cycles per 4ms. (7)Available in 40-pin 400 mil SOJ and 40/44 pin TSOP (II). (8)Single 5.0V±10% power supply. (9)All inputs and outputs are TTL compatible. (10)Extended data-out(EDO) page mode operation. Those are all the main features.

Some absolute maximum ratings of GLT41016-40J4 have been concluded into several points as follow. (1)Its operating temperature range ambient would be from 0°C to 70°C. (2)Its storage temperature plastic would be from -55°C to 150°C. (3)Its voltage relative to Vss would be from -1.0V to 7.0V. (4)Its short circuit output current would be 50mA. (5)Its power dissipation would be 1.0W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GLT41016-40J4 are concluded as follow. (1)Its input leakage current any input pin would be min -10uA and max +10uA. (2)Its output leakage current for high-Z state would be min -10uA and max 10uA. (3)Its operating current, random read/write would be max 180ma at tRAC=30ns and would be max 170mA at tRAC=35ns and would be max 160mA at tRAC=40ns and would be max 150mA at tRAC=45ns. (4)Its standby current TTL would be max 4mA. (5)Its input low voltage would be min -1V and max 0.8V. (6)Its input high voltage would be min 2.4V and max Vcc+1V. And so on. If you have any question or suggestion or want to know more information about GLT41016-40J4 please contact us for details. Thank you!