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GLT41016

Features: ·65,536 words by 16 bits organization.·Fast access time and cycle time.·Dual CAS Input.·Low power dissipation.·Read-Modify-Write, RAS -Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh and Test Mode Capability.·256 refresh cycles per 4ms.·Available in 40-pin 400 mil SOJ and 40/44 pin ...

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SeekIC No. : 004353832 Detail

GLT41016: Features: ·65,536 words by 16 bits organization.·Fast access time and cycle time.·Dual CAS Input.·Low power dissipation.·Read-Modify-Write, RAS -Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh ...

GLT41016 Data Sheet

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Part Number:
GLT41016
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·65,536 words by 16 bits organization.
·Fast access time and cycle time.
·Dual CAS Input.
·Low power dissipation.
·Read-Modify-Write, RAS -Only Refresh,
  CAS-Before-RAS Refresh, Hidden
  Refresh and Test Mode Capability.
·256 refresh cycles per 4ms.
·Available in 40-pin 400 mil SOJ and 40/44 pin TSOP (II).
·Single 5.0V±10% Power Supply.
* All inputs and Outputs are TTL compatible.
·Extended Data-Out(EDO) Page Mode operation.


Pinout

Connection Diagram


Specifications

Operating Temperature, TA (ambient).......-0 to +70
Storage Temperature(plastic)................-55 to +150
Voltage Relative to VSS...........................-1.0V to + 7.0V
Short Circuit Output Current....................... ...........50mA
Power Dissipation....................................................1.0W 


Description

The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT41016 accepts 256-cycle refresh in 4ms interval.

All inputs of GLT41016 are TTL compatible. EDO Page Mode operation allows random access up to 256 x 16 bits, within a page, with cycle times as short as 12ns.

The GLT41016 is best suited for graphics, and DSP applications requiring high performance memories.




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