GP1201FSS18

Features:

Low VCE(SAT)
Non Punch Through Silicon
 Isolated Copper Baseplate
Low Inductance Internal Construction
1200A Per Module


Application

High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters


Pinout




Specifications

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	1800	V
VCES	Gate-emitter voltage		±20	V
IC	Continuous collector current	Tcase = 65˚C	1200	A
IC(PK)	Peak collector current	1ms, Tcase = 115˚C	2400	A
Pmax	Max. transistor power dissipation	Tcase = 25˚C, Tj = 150˚C	8.5	kW
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	4000	V

Description

The Powerline range of high power modules of GP1201FSS18 includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP1201FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the GP1201FSS18 is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The GP1201FSS18 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.