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GT10Q101(Q)

IGBT Transistors 1200V/10A DIS

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SeekIC No. : 00143159 Detail

GT10Q101(Q): IGBT Transistors 1200V/10A DIS

GT10Q101(Q) Data Sheet

floor Price/Ceiling Price

US $ 1.76~2.93 / Piece | Get Latest Price
Part Number:
GT10Q101(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.93
  • $2.34
  • $1.99
  • $1.76
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3P Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-3P
Packaging : Bulk


Parameters:

Technical/Catalog InformationGT10Q101(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)10A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max140W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT10Q101 Q
GT10Q101Q



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