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H5N5006FM

Features: `Low on-resistance: R DS (on) = 2.5 typ.`Low leakage current: IDSS = 1 A max (at VDS = 500 V)`High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)`Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)`Avalanche ratingsSpecifications Item ...

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SeekIC No. : 004357701 Detail

H5N5006FM: Features: `Low on-resistance: R DS (on) = 2.5 typ.`Low leakage current: IDSS = 1 A max (at VDS = 500 V)`High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)`Low gate charge...

H5N5006FM Data Sheet

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Part Number:
H5N5006FM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low on-resistance: R DS (on) = 2.5 typ.
`Low leakage current: IDSS = 1 A max (at VDS = 500 V)
`High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)
`Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A)
`Avalanche ratings


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
3
A
Drain peak current
ID (pulse) Note 1
12
A
Body-drain diode reverse drain current
IDR
3
A
Body-drain diode reverse drain peak current
IDR (pulse) Note 1
12
A
Avalanche current
IAP Note 3
3
A
Channel dissipation
Pch Note 2
25
W
Channel to case thermal Impedance
ch-c
5.0
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25
            3. Tch 150


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