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H5N5015P

Features: ·Low on-resistance·Low leakage current·High speed switching·Low gate charge·Built-in fast recovery diodeSpecifications Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 32 A ...

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SeekIC No. : 004357707 Detail

H5N5015P: Features: ·Low on-resistance·Low leakage current·High speed switching·Low gate charge·Built-in fast recovery diodeSpecifications Item Symbol Value Unit Drain to source voltage ...

H5N5015P Data Sheet

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Part Number:
H5N5015P
Supply Ability:
5000

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Product Details

Description



Features:

·Low on-resistance
·Low leakage current
·High speed switching
·Low gate charge
·Built-in fast recovery diode


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
32
A
Drain peak current
ID (pulse) Note 1
128
A
Body-drain diode reverse drain current
IDR
32
A
Body-drain diode reverse drain peak current
IDR (pulse) Note 1
128
A
Avalanche current
IAP Note 3
10
A
Channel dissipation
Pch Note 2
175
W
Channel to case thermal Impedance
ch-c
0.174
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25
            3. Tch 150


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