HN2D03F

Application􀁺· Small package􀁺· Low forward voltage : VF (2) = 0.94V (typ.)􀁺· Small total capacitance : CT = 2.5pF (typ.Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) ...

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SeekIC No. : 004365008 Detail

HN2D03F: Application􀁺· Small package􀁺· Low forward voltage : VF (2) = 0.94V (typ.)􀁺· Small total capacitance : CT = 2.5pF (typ.Specifications Characteristic Symbol Rating U...

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Part Number:
HN2D03F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/24

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Product Details

Description



Application

􀁺· Small package
􀁺· Low forward voltage : VF (2) = 0.94V (typ.)
􀁺· Small total capacitance : CT = 2.5pF (typ.



Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 420 V
Reverse voltage VR 400 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 2* A
Power dissipation P 300** mW
Junction temperature Tj 150
Storage temperature Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Absolute Maximum Ratings per each one of Q1,Q2 or Q3. In case of simultaneous use, the Absolute Maximum Ratings per diode shall be derated to 75%.
**: Total rating




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