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Part Number: HY62KF16403E

 

 

 

 

Description: The HY62KF16403E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by ...


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HY62KF16403E General Description


The HY62KF16403E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62KF16403E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.

HY62KF16403E Maximum Ratings

Symbol Parameter Rating Unit Remark
VIN, VOUT Input/Output Voltage -0.3 to VCC+0.3V V  
Vcc Power Supply -0.3 to 4.6 V  
TA Operating Temperature -40 to 85 °C HY62KF16403E-I
TSTG Storage Temperature -55 to 150 °C  
PD Power Dissipation 1.0 W  
TSOLDER Ball Soldering Temperature & Time 260 · 10 °C·sec  

HY62KF16403E Features

Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup -. 1.2V(min) data retention
Standard pin configuration -. 44pin 400mil TSOP-II (Forward)

HY62KF16403E Connection Diagram

HY62KF16403E  Connection Diagram

HY62KF16403E datasheet

HY62KF16403E-SD55I
PDF/DataSheet Download

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