IPD30N08S2L-21, US $ .47-.85 , Infineon Technologies, IPD30N08S2L-21 DataSheet download, circuit diagram from SeekIC.com

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IPD30N08S2L-21: MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm

IPD30N08S2L-21 Data Sheet

US $ .47~.85 / Piece | Get Latest Price

Part Number:: IPD30N08S2L-21
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$.76
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$.47

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Upload time: 2024/4/26

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Recent History
What is this?

IPD30N03S2L-07 evaluate
US $.32 - .64 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 6.7mOhm
IPD30N03S2L-10 evaluate
US $.17 - .23 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 10mOhms
IPD30N03S2L-20 evaluate
US $.13 - .18 / Piece

MOSFET OPTIMOS PWR-TRANS N-CH 30V 30A 20mOhms

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	75 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	20.5 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 20.5 m Ohms

Parameters:

Technical/Catalog Information	IPD30N08S2L-21
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	20.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1650pF @ 25V
Power - Max	136W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPD30N08S2L 21 IPD30N08S2L21

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IPD30N08S2L-21

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