MFG:IOR Package Cooled:SOP-8 D/C:09+
MFG: IOR
Package Cooled: SOP-8
D/C: 09+
Description: The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurre...
The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum input voltage | -0.3 | 7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current (1) ( lsd mosfets, rth=125oC/W) |
- | 1.4 | ||
| Isd pulsed | Diode max. pulsed current (1) (for ea. mosfet) | - | 10 | ||
| Pd | Maximum power dissipation(1) ( Pd mosfets, rth=125oC/W) |
- | 1 | W | |
|
ESD1 |
Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 |
IPS022G
PDF/DataSheet Download
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