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Part Number: IPS024G

 

 

 

 

Description: The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurre...


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IPS024G General Description


The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

IPS024G Maximum Ratings

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum input voltage -0.3 7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current (1)
( lsd mosfets, rth=125/W)
- 2.3    
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) - 10    
Pd Maximum power dissipation(1)
( Pd mosfets, rth=125/W)
- 1 W  

ESD1

Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 +150  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.

IPS024G Features

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection

IPS024G Connection Diagram

IPS024G  Connection Diagram

IPS024G datasheet

IPS024G
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