Position: Home  > All Categories> Integrated Circuits (ICs) > IRF237

IRF237

Features: • 8.1A and 6.5A, 275V and 250V• rDS(ON) = 0.45W and 0.68W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• 275V, 250V DC Rated - 120V...

product image

IRF237 Picture
See larger image
SeekIC No. : 004376413 Detail

IRF237: Features: • 8.1A and 6.5A, 275V and 250V• rDS(ON) = 0.45W and 0.68W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds&...

IRF237 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF237
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

    IRF234

IRF235

 IRF236 IRF237 UNITS
Drain to Source Voltage (Note 1) VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 250 250 275 275 V
Continuous Drain Current ID 8.1 6.5 8.1 6.5 A
TC = 100
 ID 5.1 4.1 5.1 4.1 A
Pulsed Drain Current (Note 3) IDM 32 26 32 26 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 75 75 75 75 W
Linear Derating Factor   0.6

0.6

 0.6 0.6 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 180 180 180 180 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRF237 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF237.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Cables, Wires
821-0814-a
415-0100-150
Line Protection, Backups
BX0023
A20B-1008-0550
Memory Cards, Modules
WT32
VTL5C7
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Test Equipment
TOP853
TOP2005
View more