IRF2804S-7PPBF

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Configuration : Single Quint Source
Continuous Drain Current : 320 A
Resistance Drain-Source RDS (on) : 1.6 m Ohms


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Curren VGS@ 10V (Silicon Limited)	320	A
ID @ TC=100	Continuous Drain Curren VGS@ 10V(See Fig. 9)	230
ID @ TC=25	Continuous Drain Curren VGS@ 10V (Package Limited)	160
IDM	Pulsed Drain Current	1360
PD@ TC= 25	Maximum Power Dissipatio	330	W
	Linear Derating Factor	2.2	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	630	mJ
EAS(tested)	Single Pulse Avalanche Energy Tested Value	1050
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications,this HEXFET^TM  Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design of the IRF2804S-7PPbF are a 175 junction operat ing temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2804S-7PPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF2804S-7PPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	1.6 mOhm @ 160A, 10V
Input Capacitance (Ciss) @ Vds	6930pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	D²Pak, TO-263 (7 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF2804S 7PPBF IRF2804S7PPBF