IRF2807PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 82 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free




Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current,VGS @ 10V	82	A
ID @ TC = 100	Continuous Drain Current,VGS @ 10V	58
IDM	Pulsed Drain Current	280
PD @ TC = 25	Max. Power Dissipation	230	W
	Linear Derating Factor	1.5	W/
VGS	Gate-to-Source Voltage	±20	V
IAR	Avalanche Current	43	A
EAR	Repetitive Avalanche Energy	23	mJ
dv/dt	Peak Diode Recovery dv/dt	5.9	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 ( for 5s)
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

The IRF2807PbF is designed as one kind of HEXFET Power MOSFET device that has some points of features:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated; (7)lead-free. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF2807PbF can be summarized as:(1)Continuous Drain Current, VGS @ 10V TC = 25°C: 82 A;(2)Continuous Drain Current, VGS @ 10V TC = 100°C: 58 A;(3)Pulsed Drain Current IDM: 38 A;(4)Power Dissipation: 230 W;(5)Linear Derating Factor: 0.32 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Avalanche Current: 43 A;(8)Repetitive Avalanche Energy: 23 mJ;(9)Peak Diode Recovery dv/dt: 5.9 V/ns;(10)Operating Junction and Storage Temperature Range: -55 to +175 ;(11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) . If you want to know more information about the IRF2807PbF, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IRF2807PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	82A
Rds On (Max) @ Id, Vgs	13 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	3820pF @ 25V
Power - Max	230W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	160nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF2807PBF IRF2807PBF