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IRF7322D1PBF

MOSFET

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SeekIC No. : 00153231 Detail

IRF7322D1PBF: MOSFET

IRF7322D1PBF Data Sheet

floor Price/Ceiling Price

US $ .27~.68 / Piece | Get Latest Price
Part Number:
IRF7322D1PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.68
  • $.42
  • $.29
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : - 5.3 A
Resistance Drain-Source RDS (on) : 62 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 62 mOhms
Configuration : Single Dual Drain
Continuous Drain Current : - 5.3 A


Pinout

Connection Diagram


Specifications

Parameter
Maximum
Units
ID @ VGS=-12V,TC=25
Continuous Drain Current,VGS@-4.5V
-5.3
A
ID @ VGS=-12V,TC=100
-4.3
IDM
 Pulsed Drain Current
-43
PD@ TC= 25
 CMax. Power Dissipatio
2.0
W
PD@ TC= 70
1.3
 Linear Derating Factor
16
W/
VGS
 Gate-to-Source Voltage
±12
V
dv/dt
 Peak Diode Recovery dv/dt
-5.0
V/nS
TJ,TSTG
 Operating Junction
Storage Temperature Range
-55 to 150



Description

The FETKY family of co-packaged MOSFETs and Schottky diodes IRF7322D1PbF offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7322D1PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.




Parameters:

Technical/Catalog InformationIRF7322D1PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs62 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds 780pF @ 15V
Power - Max2W
PackagingTube
Gate Charge (Qg) @ Vgs29nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7322D1PBF
IRF7322D1PBF



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