MOSFET N-CH 150V 5.2A 8-SOIC
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| Parameter | Max. | Units | |
| VDS | Drain-Source Voltage | 150 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 5.2 | A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V | 3.7 | A |
| IDM | Pulsed Drain Current | 42 | A |
| PD @TA = 25°C | Power Dissipation | 3.0 | W |
| Linear Derating Factor | 0.02 | mW/°C | |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| TJ , TSTG | Junction and Storage Temperature Range | -55 to + 175 | °C |
| Technical/Catalog Information | IRF7494 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 5.2A |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 3.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1750pF @ 25V |
| Power - Max | 3W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 54nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7494 IRF7494 |