Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Series: HEXFET®
Power - Max: 1.5W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 8.6A
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 89nC @ 5V
Input Capacitance (Ciss) @ Vds: 4300pF @ 15V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V
Features: ·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.1mm)
·Available in Tape & ReelPinout
Specifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
±8.6 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ -4.5V |
±6.8 |
| IDM |
Pulsed Drain Current |
±68 |
| PD @TA = 25 |
Power Dissipation |
1.5 |
W |
| PD @TA = 70 |
Power Dissipation |
0.96 |
| |
Linear Derating Factor |
0.01 |
W/ |
| VGS |
Gate-to-Source Voltage |
±12 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionHEXFET® power MOSFETs IRF7700 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the TSSOP-8 IRF7700 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Parameters: | Technical/Catalog Information | IRF7700 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 8.6A |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 8.6A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 4300pF @ 15V |
| Power - Max | 1.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 89nC @ 5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7700
IRF7700
|
IRF7700 Data Sheet
