MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 17 A | ||
| Resistance Drain-Source RDS (on) : | 165 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
|
Parameter |
Max. |
Units | |
|
ID@TC = 25 |
Continuous Drain Current,VGS@10V |
17 |
A |
|
ID@TC =100 |
Continuous Drain Current,VGS@10V |
12 | |
|
IDM |
Pulsed Drain Current |
68 | |
|
PD@T C= 25 |
CPower Dissipatio |
140 |
|
|
PD@TA = 25 |
CPower Dissipation* |
3.0 |
W |
|
Linear Derating Factor |
0.96 |
W/ | |
|
VGS dv/dt |
Gate-to-Source Voltage |
±30 8.3 |
0 V/ns |
|
TJ |
Operating Junction and |
-55 to + 175 |
|
|
TSTG |
Storage Temperature Range | ||
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| Technical/Catalog Information | IRFR15N20DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
| Power - Max | 3W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR15N20DPBF IRFR15N20DPBF |