MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 18 A | ||
| Resistance Drain-Source RDS (on) : | 125 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 18 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 13 | |
| IDM | Pulsed Drain Current | 72 | |
| PD @TC = 25°C | Power Dissipation | 110 | W |
| Linear Derating Factor | 0.71 | W/ | |
| VGS | Gate-to-Source Voltage | ±30 | V |
| dv/dt | Peak Diode Recovery dv/dt | 3.3 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRFR18N15DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR18N15DPBF IRFR18N15DPBF |