IRFR1N60A, US $ .92-.95 , Vishay/Siliconix, IRFR1N60A DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158935 Detail

IRFR1N60A: MOSFET N-Chan 600V 1.4 Amp

IRFR1N60A Data Sheet

US $ .92~.95 / Piece | Get Latest Price

Part Number:: IRFR1N60A
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1.4 A
Resistance Drain-Source RDS (on) :	7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 7 Ohms

Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· Power Factor Correction

Specifications

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	14	A
I_D@ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	0.89
I_DM	Pulsed Drain Current	5.6
P_D @T_C = 25°C	Power Dissipation	36	W
	Linear Derating Factor	0.28	W/°C
V_GS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	3.8	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55to+150	°C
	Soldering Temperature, for 10 seconds	300(1.6mm from case )	°C

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IRFR1N60A

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