MFG:IR Package Cooled:D-PAK D/C:09+
MFG: IR
Package Cooled: D-PAK
D/C: 09+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
59 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
42 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
| IDM | Pulsed Drain Current |
240 | |
| PD @TC = 25°C | Power Dissipation |
110 |
W |
| Linear Derating Factor |
0.72 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
55 |
mJ
|
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
82 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16
|
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw |
10 lbf*in (1.1N*m) |
IRF034
PDF/DataSheet Download
MOSFET N-CH 75V 42A DPAK
Specifically designed for Automotive applications , this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175junction operating temperature, fa...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, ...
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combi...
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