IRFR2905Z

Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A ID @ TC = 100°C Continuous Drai...

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SeekIC No. : 004377355 Detail

IRFR2905Z: Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ...

floor Price/Ceiling Price

Part Number:
IRFR2905Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
59
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
42
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
42
IDM Pulsed Drain Current
240
PD @TC = 25°C Power Dissipation
110
W
Linear Derating Factor
0.72
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS (Thermally limited) Single Pulse Avalanche Energy
55
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
82
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbf*in (1.1N*m)
 



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET of IRFR2905Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRFR2905Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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