MOSFET N-Chan 400V 1.7 Amp
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.7 A | ||
| Resistance Drain-Source RDS (on) : | 3.6 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 400 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current | VGS at 10 V | TC = 25 | ID | 1.7 | A |
| TC = 100 | 1.1 | ||||
| Pulsed Drain Currenta | IDM | 6.0 | |||
| Linear Derating Factor | 0.20 | W/ | |||
| Linear Derating Factor (PCB Mount)e | 0.020 | W/ | |||
| Single Pulse Avalanche Energyb | EAS | 86 | mJ | ||
| Repetitive Avalanche Currenta | IAR | 1.7 | A | ||
| Repetitive Avalanche Energya | EAR | 2.5 | mJ | ||
| Maximum Power Dissipation (PCB Mount)e | TA = 25 | PD | 2.5 | W | |
| Maximum Power Dissipation | TC = 25 | 25 | W | ||
| Peak Diode Recovery dV/dtc | dV/dt | 4.0 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | |||
| Soldering Recommendations (Peak Temperature) | for 10 s | 260d | |||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 52 mH, RG = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 1.7 A, dI/dt 40 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply