IRFR310

MOSFET N-Chan 400V 1.7 Amp

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IRFR310 Picture
SeekIC No. : 00158579 Detail

IRFR310: MOSFET N-Chan 400V 1.7 Amp

floor Price/Ceiling Price

US $ .81~.84 / Piece | Get Latest Price
Part Number:
IRFR310
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~2250
  • 2250~3000
  • 3000~6000
  • Unit Price
  • $.84
  • $.82
  • $.81
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 3.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 3.6 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR310/SiHFR310)
• Straight Lead (IRFU310/SiHFU310)
• Available in Tape and Reel
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available


The above info is from (www.seekic.com)


Application

Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.




Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400 V
Gate-Source Voltage VGS ±20
Continuous Drain Current VGS at 10 V TC = 25 ID 1.7 A
TC = 100 1.1
Pulsed Drain Currenta IDM 6.0
Linear Derating Factor   0.20 W/
Linear Derating Factor (PCB Mount)e   0.020 W/
Single Pulse Avalanche Energyb EAS 86 mJ
Repetitive Avalanche Currenta IAR 1.7 A
Repetitive Avalanche Energya EAR 2.5 mJ
Maximum Power Dissipation (PCB Mount)e TA = 25 PD 2.5 W
Maximum Power Dissipation TC = 25 25 W
Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s   260d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 52 mH, RG = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 1.7 A, dI/dt 40 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply



Edited by (www.seekic.com) ,the biggest IC PDF and datasheet download site.


Description


IRFR310
The above info is from (www.seekic.com)


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