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MFG:IOR  Package Cooled:TO252  

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Part Number: IRFR320

 

MFG: IOR

Package Cooled: TO252

 

Description: These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...


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IRFR320 General Description


These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17404.

IRFR320 Maximum Ratings

Drain to Source Voltage (Note 1) VDS ...................................400 V
Drain to Gate Voltage (RGS = 20k) (Note 1)VDGR ...............400 V
Continuous Drain Current  ID .................................................3.1A
TC = 100 ID .........................................................................2.0A
Pulsed Drain Current (Note 3)  IDM ........................................12 A
Gate to Source Voltage VGS................................................ ±20 V
Maximum Power Dissipation PD ............................................50 W
Linear Derating Factor 0.4 .....................................................W/
Single Pulse Avalanche Energy Rating (Note 4)EAS ............190 mJ
Operating and Storage Temperature  TJ, TSTG ..........-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL ..................300
Package Body for 10s, See Techbrief 334 Tpkg ...................260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

IRFR320 Features

• 3.1A, 400V
• rDS(ON) = 1.800
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

IRFR320 datasheet

IRFR320
PDF/DataSheet Download

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