IRFR3709Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Packaging: Tube
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 86A
Power - Max: 79W
Input Capacitance (Ciss) @ Vds: 2330pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V


Application

·High Frequency Synchronous Buck Converters for Computer Processor Power
·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	84	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	61
IDM	Pulsed Drain Current	340
PD @TC = 25°C	Maximum Power Dissipation	79	W
PD @TA= 25°C	Maximum Power Dissipation	39
	Linear Derating Factor	0.53	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)