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MFG:IR  Package Cooled:D-PAK  D/C:09+  

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Part Number: IRFR4105Z

 

MFG: IR

Package Cooled: D-PAK

D/C: 09+

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRFR4105Z General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRFR4105Z Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
30
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
21
IDM Pulsed Drain Current
120
PD @TC = 25°C Power Dissipation
48
W
  Linear Derating Factor
0.32
W/°C
VGS Gate-to-Source Voltage
±20
V
EAS (Thermally limited) Single Pulse Avalanche Energy
29
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
46
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)

IRFR4105Z Features

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

IRFR4105Z datasheet

IRF034
PDF/DataSheet Download

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