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MFG:IR Package Cooled:D-PAK D/C:09+


Part Number: IRFR48Z
MFG: IR
Package Cooled: D-PAK
D/C: 09+
Description: Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes th...
MFG:IR Package Cooled:D-PAK D/C:09+


MFG: IR
Package Cooled: D-PAK
D/C: 09+
Description: Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes th...
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 62 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 44 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
| IDM | Pulsed Drain Current | 250 | |
| PD @TC = 25°C | Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy | 74 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
110 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf`in (1.1N`m) |
IRF034
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