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MFG:IR  Package Cooled:D-PAK  D/C:09+  

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Part Number: IRFR48Z

 

MFG: IR

Package Cooled: D-PAK

D/C: 09+

Description: Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes th...


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IRFR48Z General Description


Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRFR48Z Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 62 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

 42

IDM Pulsed Drain Current 250
PD @TC = 25°C Power Dissipation 91 W
Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS (Thermally limited) Single Pulse Avalanche Energy 74 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value

110

IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf`in (1.1N`m)

IRFR48Z Features

•Advanced Process Technology
•Ultra Low On-Resistance
•175°C Operating Temperature
•Fast Switching
•Repetitive Avalanche Allowed up to Tjmax

IRFR48Z datasheet

IRF034
PDF/DataSheet Download

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