MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 55 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 18 A | ||
| Resistance Drain-Source RDS (on) : | 110 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
| Technical/Catalog Information | IRFR5505PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 9.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Power - Max | 57W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 32nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR5505PBF IRFR5505PBF |